2D Dopant Profile

Two-Dimensional Dopant Profiling is a metrology technique that maps dopant concentration across both depth and lateral dimensions in semiconductor structures.

## What Is 2D Dopant Profiling?

  • Methods: SCM (Scanning Capacitance), SSRM (Spreading Resistance), SIMS tomography
  • Resolution: 1-10nm lateral, depending on technique
  • Applications: Junction shape analysis, LDD profile verification, implant scatter
  • Contrast: 1D profiling (SIMS) only measures depth

## Why 2D Profiling Matters

Modern transistors have complex 3D junction geometries. 1D depth profiles miss critical lateral dopant distribution that affects device performance.

2D vs 1D Dopant Profiling: ┌─ Gate ─┐1D SIMS: ↓ only vertical ┌────┴────┐ │ Source │ 2D Profile reveals: │ │ - Lateral diffusion │↓↓↓↓↓↓↓↓│ - Junction curvature └─────────┘ - Pocket implant shape 2D SCM: Maps full x-y-z concentration

Technique Comparison:
| Method | Resolution | Quantitative | Sample Prep |
|--------|------------|--------------|-------------|
| SCM | 5-10nm | Relative | Cross-section |
| SSRM | 1-5nm | Yes | Cross-section |
| Atom Probe | <1nm | Excellent | Needle specimen |

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