Set a die power, geometry and cooling stack and run it — the simulation executes on the ChipFoundryServices distributed compute pool and solves the self-consistent junction-to-ambient thermal-resistance ladder (with temperature-dependent silicon conductivity), then adds a hotspot-spreading model to find the peak junction temperature, the thermal margin against Tj,max, and whether the part throttles. Power density, not transistor count, now sets the cooling budget. Reduced-order educational model. See also the interconnect RC, CMP planarization, plasma-etch and lithography simulators and the compute-pool status.
curl -X POST https://www.chipfoundryservices.com/edge/thermal \
-H "Content-Type: application/json" \
-d '{"die_power_w":300,"die_size_mm":20,"die_thickness_um":250,
"hotspot_power_frac":0.25,"hotspot_area_frac":0.05,
"tim_conductivity_w_mk":5.0,"heatsink_resistance_c_w":0.15,"ambient_c":25}'
Returns JSON with outputs (junction-to-ambient resistance, silicon/TIM/heatsink
resistances, temperature-dependent silicon conductivity, uniform and hotspot junction
temperature, hotspot delta, average and peak power density, thermal margin, verdict), the full
profile (per-layer resistance stack, 181-point lateral temperature profile, geometry),
the serving node, and compute_ms.